Infrared photoluminescence from Si/Ge nanowire grown Si wafers

  title={Infrared photoluminescence from Si/Ge nanowire grown Si wafers},
  author={Seref Kalem and P. Werner and V N Talalaev},
  journal={2012 Photonics Global Conference (PGC)},
This paper investigates the enhancement of room temperature (RT) infrared (IR) photoluminescence (PL) from Si/Ge nanowire (NW) grown silicon (Si) wafers. The NW grown wafers were treated by an acid atmosphere consisting of vapor of hydrofluoric HF and HNO3 chemical mixture. The treatment modifies the surface particularly at defect sites such as pits, dislocations and stacking faults as well as NW surfaces by etching and forming oxides. This process can induce a passivated crystalline Si surface… CONTINUE READING
0 Extracted Citations
5 Extracted References
Similar Papers

Referenced Papers

Publications referenced by this paper.
Showing 1-5 of 5 references

Simultaneous stress and defect luminescence study on silicon

  • P Gundel, MC Schubert, W Warta
  • 2010

Gosele, "On the formation of Si nanowires by molecular beam epitaxy

  • P. Werner, ND Zakharov, G Gerth, U L Shubert
  • Int. J. Mat. Res
  • 2006

Room temperature light emssion from a highly strained Si / Ge superlattice " Appl

  • N. D. Zakharov YO Talalaev
  • Phys . Lett .
  • 2003

Tonkikh and GE Cirlin, "Room temperature light emssion from a highly strained Si/Ge superlattice

  • N. D. Zakharov YO Talalaev, AA P Werner
  • Appl. Phys. Lett
  • 2003

Characterization of structural changes associated with doping silicon nanowires by ion implantation " Crystal Growth and Design

  • PO Kanungo, P Werner R Scholtz
  • Appl . Phys . Let .

Similar Papers

Loading similar papers…