Infrared photoluminescence from Si/Ge nanowire grown Si wafers

@article{Kalem2012InfraredPF,
  title={Infrared photoluminescence from Si/Ge nanowire grown Si wafers},
  author={Seref Kalem and P. Werner and V N Talalaev},
  journal={2012 Photonics Global Conference (PGC)},
  year={2012},
  pages={1-5}
}
This paper investigates the enhancement of room temperature (RT) infrared (IR) photoluminescence (PL) from Si/Ge nanowire (NW) grown silicon (Si) wafers. The NW grown wafers were treated by an acid atmosphere consisting of vapor of hydrofluoric HF and HNO3 chemical mixture. The treatment modifies the surface particularly at defect sites such as pits, dislocations and stacking faults as well as NW surfaces by etching and forming oxides. This process can induce a passivated crystalline Si surface… CONTINUE READING
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