Influences of mask materials in selective-area RF-MBE growth for GaN nanowires

Abstract

GaN-based nanowires (NWs) are attracting interest for realizing highly luminant light emitters, which fill green gaps of current LEDs, and selective-area growth (SAG) is one of the key technologies for their realization. We investigated the influences of mask materials in SAG of GaN using RF-molecular beam epitaxy (RF-MBE), and found significant differences… (More)

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