Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

  title={Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs},
  author={Helong Li and Stig Munk-Nielsen and Xiongfei Wang and Ramkrishan Maheshwari and Szymon Michal Beczkowski and Christian Uhrenfeldt and Wulf-Toke Franke},
  journal={IEEE Transactions on Power Electronics},
This paper addresses the influences of device and circuit mismatches on paralleling the silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then, the influence of circuit mismatch on paralleling SiC MOSFETs is investigated and experimentally evaluated for the first time. It is found that the mismatch of the switching loop stray inductance can also lead to… CONTINUE READING
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Recent advances on dielectrics technology for SiC and GaN power devices

  • F. Roccaforte, P. Fiorenza, +5 authors M. Saggio
  • Appl. Surf. Sci., vol. 301, pp. 9-18, May. 2014.
  • 2014
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