Corpus ID: 237485201

Influences of ALD Al$_2$O$_3$ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

  title={Influences of ALD Al\$\_2\$O\$\_3\$ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors},
  author={Jiarui Gong and Jisoo Kim and Tien K. Ng and Kuangye Lu and Donghyeok Kim and Jie Zhou and Dong Liu and Jeehwan Kim and Boon Siew Ooi and Zhenqiang Jack Ma},
  • Jiarui Gong, Jisoo Kim, +7 authors Z. Ma
  • Published 10 September 2021
  • Physics
Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar transistors has been impossible. The recently demonstrated approach of grafting n-type GaN with p-type semiconductors, like Si and GaAs, by employing ultrathin (UO) Al2O3 at the interface of Si/GaN and GaAs/GaN, has shown the feasibility to overcome the poor p-type doping challenge of GaN by providing epitaxy-like… Expand

Figures and Tables from this paper


Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Abstract III-N surface polarization compensating charge referred here to as ‘surface donors’ (SD) was analyzed in Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaledExpand
Growth and characteristics of AlGaN/GaN heterostructures on sp2-bonded BN by metal–organic chemical vapor deposition
AlGaN/GaN heterostructures were grown by metal–organic chemical vapor deposition (MOCVD) on sp 2 -bonded BN using AlN as a nucleation layer. The best x-ray diffraction rocking curveExpand
P-type silicon as hole supplier for nitride-based UVC LEDs
The ineffective p-type doping of nitrides usingmagnesium (Mg), the best available dopant, has limited the development and performance of all III-nitride-based devices, including bipolar junctionExpand
On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors
It is commonly accepted that interface states at the passivation surface of AlGaN/GaN heterostructures play an important role in the formation of the 2DEG density. Several interface state models areExpand
Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment
The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most technologically important parameters. We report the band offsets of the Al/Al2O3/GaAs structure and the effectExpand
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of theExpand
Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs
Diamond is a highly attractive ultrawide bandgap semiconductor for next-generation high-power switching devices and RF devices for its superior physical and electrical properties. However, the lackExpand
Electronic and chemical properties of the c-Si/Al2O3 interface
Using aluminum oxide (Al2O3) films deposited by atomic layer deposition (ALD), the dominant passivation mechanisms at the c-Si/Al2O3 interface, as well as the chemical composition of the interfaceExpand
Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride
Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with aExpand
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection
AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. NitrideExpand