Influence of thermal oxidation on the interfacial properties of ultrathin strained silicon layers

@inproceedings{IoannouSougleridis2011InfluenceOT,
  title={Influence of thermal oxidation on the interfacial properties of ultrathin strained silicon layers},
  author={Vassilios Ioannou-Sougleridis and Nikolaos Kelaidis and Dimitrios Skarlatos and Christos Tsamis and Stavroula N. Georga and Christoforos A. Krontiras and Ph. Komninou and Th. Speliotis and Panagiotis Dimitrakis and Bob Kellerman and Mike Seacrist},
  year={2011}
}
Abstract In this work we examine the influence of thermal oxidation on the electrical characteristics of ultra-thin strained silicon layers grown on relaxed Si 0.78 Ge 0.22 substrates under moderate to high thermal budget conditions in N 2 O ambient at 800 °C. The results reveal the presence of a large density of interfacial traps which depends on the oxidation process. As long as the strained silicon layer remains between the growing oxide and the underlying Si 0.78 Ge 0.22 layer, the density… CONTINUE READING

Citations

Publications citing this paper.

TRAPPING ASPECTS IN SILICON-BASED NANOSTRUCTURES

VIEW 3 EXCERPTS
CITES METHODS & BACKGROUND
HIGHLY INFLUENCED