Influence of the thickness of nanosized silicon nitride films on a stoichiometric composition


The experimental study of silicon nitride films obtained by magnetron sputtering of crystalline silicon in a mixture of argon and nitrogen is demonstrated. The changes of the intrinsic properties of protective and insulating SiN<sub>4</sub> structures with thicknesses of 40-200 nm depending on the underlying surface and of the working thickness were shown.