Influence of the atom source operating parameters on the structural and optical properties of In xGa 1 − xN nanowires grown by plasma-assisted molecular beam epitaxy

@inproceedings{Hille2018InfluenceOT,
  title={Influence of the atom source operating parameters on the structural and optical properties of In xGa 1 − xN nanowires grown by plasma-assisted molecular beam epitaxy},
  author={Pascal Van Hille and Felix Walther and Philip Klement and Jan M{\"u}{\ss}ener and J{\"o}rg Sch{\"o}rmann and J. Kaupe and Slobodan Miti{\'c} and Nils W Rosemann and Sangam Chatterjee and Andreas Beyer and Katharina I. Gries and Kerstin Volz and Martin Eickhoff},
  year={2018}
}
The influence of the atom source operating parameters on the structural and optical properties of In xGa 1 − xN/GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy is investigated. Electron microscopy and photoluminescence spectroscopy reveal a change of the NW tip morphology and an enhancement of the local indium incorporation with increasing nitrogen flux. Tuning the density ratio of atomic-to-excited molecular nitrogen to lower values minimizes the point defect density, which… CONTINUE READING
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