Influence of the atmosphere on ultra-thin oxynitride films by plasma nitride process

Abstract

In plasma nitridation process for ultra thin gate dielectrics, the nitrogen concentration in the film is drastically dropped during short time after plasma nitridation process. This reduction of nitrogen before post plasma nitridation anneal process causes the Vth shift and Vth variation on the wafer. Vth shift is larger in NMOSFET. On the other hand, Vth… (More)

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Cite this paper

@article{Saki2005InfluenceOT, title={Influence of the atmosphere on ultra-thin oxynitride films by plasma nitride process}, author={Kourosh Saki and T. Shimizu and S. Mori and A. Yamamoto}, journal={ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005.}, year={2005}, pages={200-203} }