Influence of surface states on tunneling spectra of n-type GaAs(110) surfaces

Abstract

We show that surface states within the conduction band of n-type GaAs 110 surfaces play an important role in reducing the tunneling current out of an accumulation layer that forms due to an applied potential from a nearby probe tip. Numerical computation of the tunneling current combined with an electrostatic potential computation of the tip-induced band bending TIBB reveals that occupation of the surface states limits the TIBB, thus leading to the limitation of the accumulation. As a result, the tunneling current out of the accumulation layer is strongly suppressed, which is in quantitative agreement with the experiment.

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Cite this paper

@inproceedings{Ishida2009InfluenceOS, title={Influence of surface states on tunneling spectra of n-type GaAs(110) surfaces}, author={Nobuyuki Ishida and Kazuhisa Sueoka and Randall M. Feenstra}, year={2009} }