Influence of static atomic displacements on composition quantification of AlGaN/GaN heterostructures from HAADF-STEM images.


In an earlier publication Rosenauer et al. introduced a method for determination of composition in AlGaN/GaN heterostructures from high-angle annular dark field (HAADF) images. Static atomic displacements (SADs) were neglected during simulation of reference data because of the similar covalent radii of Al and Ga. However, SADs have been shown (Grillo et al… (More)
DOI: 10.1017/S1431927614012732