Influence of sample momentum space features on scanning tunnelling microscope measurements.

@article{West2021InfluenceOS,
  title={Influence of sample momentum space features on scanning tunnelling microscope measurements.},
  author={Maxwell T. West and Muhammad Usman},
  journal={Nanoscale},
  year={2021}
}
Theoretical understanding of scanning tunnelling microscopy (STM) measurements involve electronic structure details of the STM tip and the sample being measured. Conventionally, the focus has been on the accuracy of the electronic state simulations of the sample, whereas the STM tip electronic state is typically approximated as a simple spherically symmetric s orbital. This widely used s orbital approximation has failed in recent STM studies where the measured STM images of subsurface impurity… Expand

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References

SHOWING 1-9 OF 9 REFERENCES
Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon.
TLDR
This study applies a comprehensive atomistic theoretical framework to compute scanning tunnelling microscopy (STM) images of subsurface donor wave functions with two central-cell correction formalisms previously employed in the literature, and indicates that the central- cell effects are visible in the simulated STM images up to ten monolayers below the silicon surface. Expand
Spatially resolved electronic structure of an isovalent nitrogen center in GaAs
Small numbers of nitrogen dopants dramatically modify the electronic properties of GaAs, generating spatially localized resonant states within the conduction band, pair and cluster states in the bandExpand
Direct visualization of the N impurity state in dilute GaNAs using scanning tunneling microscopy.
TLDR
The N impurity states broadened over several nanometers and exhibited a highly anisotropic distribution with a bowtie-like shape on the GaAs(110) surface, which can be explained by an isotropic propagation of strain along the zigzag chains of Ga and As atoms in the {110} plane. Expand
Intervalley coupling for interface-bound electrons in silicon: An effective mass study
Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom inExpand
Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy
We show the potential of cross-sectional scanning tunneling microscopy to address structural properties of dilute III-V bismides by investigating Bi:InP. Bismuth atoms down to the second monolayerExpand
Framework for atomic-level characterisation of quantum computer arrays by machine learning
Atomic-level qubits in silicon are attractive candidates for large-scale quantum computing; however, their quantum properties and controllability are sensitive to details such as the number of donorExpand
Atomic-scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory
D. Tjeertes,1, ∗ A. Vela,2 T. J. F. Verstijnen,1 E. G. Banfi,1 P. J. van Veldhoven,1 M. G. Menezes,2 R. B. Capaz,2 B. Koiller,2 and P. M. Koenraad1 1Department of Applied Physics, EindhovenExpand
Impact of disorder on the optoelectronic properties of gabinas alloys and heterostructures
  • Phys. Rev. Applied 10,
  • 2018
Single-Atom Nanoelectronics