In this work, a simulation method from strained valence band structures to strained mobility calculation to consider a radial stress at the boundary of HfO2 gate dielectric surrounding Ge(110) nanowire is developed. The simulation implements the radial stress to strain distribution calculation via finite element method and then to valence band calculation. The radial stress at the boundary of gate dielectric pushes the valence subbands downwards in contrast with lattice mismatch strain effects between Ge NW and gate dielectric. The impact of the radial stress on the hole effective masses and density of states of HfO2 gate dielectric surrounding Ge(110) nanowire are also investigated. The potential distribution and holes density distribution are calculated by solving the 2D Poisson equation and Schrödinger equation self-consistently in NW cross section. Hole mobility is obtained by modified Kubo-Greenwood formula. Based on strained valence band structures, the hole density distribution in cross-sectional Ge(110) NW reduces with larger radial stress value. The phonon scattering-limited hole mobility in NW significantly increases as the radial stress increases.