Influence of parasitic effects of the “3ω” measurement setup to improve the determination of GaN HEMTs thermal impedance

@article{Mustafa2014InfluenceOP,
  title={Influence of parasitic effects of the “3ω” measurement setup to improve the determination of GaN HEMTs thermal impedance},
  author={Avcu Mustafa and Sommet Raphael and Quere Raymond},
  journal={2014 9th European Microwave Integrated Circuit Conference},
  year={2014},
  pages={9-12}
}
The thermal impedance of Gallium Nitride based High Electron Mobility Transistors (GaN HEMTs) has been characterized using the “3ω method”. We already demonstrated in a previous work that, subject to certain conditions, the voltage oscillation at the third harmonic is the real image of the thermal impedance of the device. In this work, we propose both a theoretical approach to understand the limitation of the 3ω test bench and a comparison with measurements especially when power HEMTs are used… CONTINUE READING

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