Influence of metallic tubes on the reliability of CNTFET SRAMs: error mechanisms and countermeasures

@inproceedings{Wang2011InfluenceOM,
  title={Influence of metallic tubes on the reliability of CNTFET SRAMs: error mechanisms and countermeasures},
  author={Zhen Wang and Mark G. Karpovsky and Ajay Joshi},
  booktitle={ACM Great Lakes Symposium on VLSI},
  year={2011}
}
Carbon nanotubes (CNTs) are considered as a possible successor to the CMOS technology. The adoption of these nanodevices for designing large VLSI systems, however, is limited by the unreliable manufacturing process. In this paper, we investigate the possibility of using CNTFETs to build SRAM arrays. We analyze the error mechanisms and show how stuck-at faults and pattern sensitive faults are caused by metallic tubes in different transistors of a 6-T SRAM cell. The results indicate the need of… CONTINUE READING

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