Influence of etching parameters on the defect profile and the depth of damage of AlGaAs induced by ion beam etching

@inproceedings{Otte1998InfluenceOE,
  title={Influence of etching parameters on the defect profile and the depth of damage of AlGaAs induced by ion beam etching},
  author={Karsten Otte and Frank Frost and Alexandra Schindler and Gerd Lippold and Volker Gottschalch and R.-H. Flagmeyer and Frieder Bigl},
  year={1998}
}
Abstract The influence of the dry etching process parameters on the ion induced damage profile was investigated by nitrogen ion beam etching (IBE) of AlGaAs at two different ion energies by spatial resolved confocal photoluminescence (PL) measurements on specially prepared beveled sections of Al 0.35 Ga 0.65 As/GaAs MQW structures. The results reveal that the extension of the defect profile is not proportional to the energy of the nitrogen ions, i.e. the lower ion energy leads to a higher… CONTINUE READING