Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs

@article{Saito2010InfluenceOE,
  title={Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs},
  author={Wataru Saito and Tomohiro Nitta and Yorito Kakiuchi and Yasunobu Saito and Takao Noda and Hidetoshi Fujimoto and Akira Yoshioka and Tetsuya Ohno},
  journal={2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)},
  year={2010},
  pages={339-342}
}
This paper reports that the maximum electric field is a dominant factor for current collapse phenomena and reliability in high-voltage GaN-HEMTs. The relation between the dynamic on-resistance increase caused by the collapse phenomena and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. After the continuous switching test for 7… CONTINUE READING