Influence of d(x/sup 2/-y/sup 2/) symmetry on device applications of high-T/sub c/ grain boundary junctions


Grain boundary junctions in high-T/sub c/ thin films generally consist of facets with typical dimensions below 100 nm. In combination with a d(x/sup 2/-y/sup 2/) symmetry component of the order parameter, this faceting gives rise to an inhomogeneous critical current density J/sub c/ along the grain boundary. The inhomogeneity is most prominent for… (More)


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