Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP „ 001 ... nanostructures

@inproceedings{Gonzlez2000InfluenceOB,
  title={Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP „ 001 ... nanostructures},
  author={Luisa Aleyda Garc{\'i}a Gonz{\'a}lez and Fernando Briones and J. Martı́nez-Pastor and C. Ballesterosc},
  year={2000}
}
We have studied the influence of InP buffer-layer morphology in the formation of InAs nanostructures grown on InP ~001! substrates by solid-source molecular-beam epitaxy. Our results demonstrate that when InP buffer layers are grown by atomic-layer molecular-beam epitaxy, InAs quantum dot-like structures are formed, whereas InP buffer layers grown by MBE produce quantum-wire-like structures. The optical properties of these corrugated structures make them potential candidates for their use in… CONTINUE READING