Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 /spl mu/m fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

@article{Litkyanchikova2004InfluenceOA,
  title={Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 /spl mu/m fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers},
  author={N. Litkyanchikova and N. Garbar and A. Smolanka and Eddy Simoen and Cor Claeys},
  journal={Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)},
  year={2004},
  pages={357-360}
}
The behaviour of so-called back-gate induced Lorentzians has been investigated in fully depleted (FD) silicon-on-insulator (SOI) MOSFETs, fabricated in a 0.13 /spl mu/m CMOS technology, on ELTRAN and UNIBOND wafers. While this excess low-frequency (LF) noise source is fairly easily observed in ELTRAN (E) p-and UNIBOND (U) nMOSFETs, when the back-gate… CONTINUE READING