Influence of X-irradiation on the solicon-silicon dioxide interface of MOS structures

@article{Voland1974InfluenceOX,
  title={Influence of X-irradiation on the solicon-silicon dioxide interface of MOS structures},
  author={Gerard Voland and Herbert Pagnia},
  journal={Applied physics},
  year={1974},
  volume={3},
  pages={77-80}
}
Silicon MOS structures with an SiO2−Si3N4 insulator were exposed to X-rays. Positive oxide charges arise and the continuous density of fast states increases at the Si−SiO2 interface. In addition, a single energy state develops above the middle of the energy gap atE−Ev=600 meV. Annealing measurements in dry air and H2 lead to the conclusion that the single energy level originates from a dissociated hydrogen bond in the silicon dioxide.