Influence of Te concentration on the infrared cathodoluminescence of GaAs:Te wafers

  • B. Mhdez
  • Published 1999

Abstract

The distribution of defects, impurities, and of several physical parameters is known to be inhomogeneous in III-V wafers, showing often W-, M-, or Ushaped profiles across a wafer diameter. One of the techniques that provide information about space distribution and nature of defects, or other recombination centers in III-V wafers is the cathodoluminescence… (More)

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5 Figures and Tables