Influence of Field Effects on the Performance of InGaAs-Based Terahertz Radiation Detectors

@article{Minkeviius2016InfluenceOF,
  title={Influence of Field Effects on the Performance of InGaAs-Based Terahertz Radiation Detectors},
  author={Linas Minkevi{\vc}ius and Vincas Tamo{\vs}iūnas and Martynas Kojelis and Ernestas Žąsinas and Virginijus Bukauskas and Arūnas {\vS}etkus and Renata Butkutė and Irmantas Ka{\vs}alynas and Gintaras Valu{\vs}is},
  journal={Journal of Infrared, Millimeter, and Terahertz Waves},
  year={2016},
  volume={38},
  pages={689-707}
}
A detailed electrical characterization of high-performance bow-tie InGaAs-based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Current-voltage curves were measured and modelled using the Synopsys Sentaurus TCAD package to gain deeper… 

InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions

A detailed study of photoreflectance, low-frequency noise characteristics and THz sensitivity of InGaAs bow-tie diodes is presented and optimal conditions for device room temperature operation in the THz range with respect to signal-to-noise ratio are considered.

Compact solutions for spectroscopic solid-state-based terahertz imaging systems

Convenience in use of room-temperature terahertz (THz) imaging systems, reduction of their dimensions and presence of on-chip solutions remains one of prime interests for direct implementation aims.

A review of terahertz detectors

  • R. Lewis
  • Physics
    Journal of Physics D: Applied Physics
  • 2019
Physics is the interplay of energy and matter. Energy, in the form of light, interacting with matter, principally in the solid state, underpins this topical review. The subject is developed carefully

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