Influence of Field Effects on the Performance of InGaAs-Based Terahertz Radiation Detectors

  title={Influence of Field Effects on the Performance of InGaAs-Based Terahertz Radiation Detectors},
  author={Linas Minkevi{\vc}ius and Vincas Tamo{\vs}iūnas and Martynas Kojelis and Ernestas Žąsinas and Virginijus Bukauskas and Arūnas {\vS}etkus and Renata Butkutė and Irmantas Ka{\vs}alynas and Gintaras Valu{\vs}is},
  journal={Journal of Infrared, Millimeter, and Terahertz Waves},
A detailed electrical characterization of high-performance bow-tie InGaAs-based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Current-voltage curves were measured and modelled using the Synopsys Sentaurus TCAD package to gain deeper… 

Compact solutions for spectroscopic solid-state-based terahertz imaging systems

Convenience in use of room-temperature terahertz (THz) imaging systems, reduction of their dimensions and presence of on-chip solutions remains one of prime interests for direct implementation aims.

A review of terahertz detectors

  • R. Lewis
  • Physics
    Journal of Physics D: Applied Physics
  • 2019
Physics is the interplay of energy and matter. Energy, in the form of light, interacting with matter, principally in the solid state, underpins this topical review. The subject is developed carefully

InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions

A detailed study of photoreflectance, low-frequency noise characteristics and THz sensitivity of InGaAs bow-tie diodes is presented and optimal conditions for device room temperature operation in the THz range with respect to signal-to-noise ratio are considered.



Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors

In search of novel detectors of electromagnetic radiation at terahertz frequencies, field-effect transistors (FETs) have recently gained much attention. The current literature studies them with

Detection of terahertz/sub-terahertz radiation by asymmetrically-shaped 2DEG layers

A diode structure to detect THz/subTHz radiation based on an MBE-grown modulation-doped GaAs/Al0.25Ga0.75As structure is proposed. Devices have an asymmetrically-shaped geometrical form in the plane

Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor

The resonant detection of subterahertz radiation by two-dimensional electron plasma confined in a submicron gate GaAs/AlGaAs field-effect transistor is demonstrated. The results show that the

Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces

A comparison is made between the electronic structures determined in ultrahigh vacuum of three surfaces using scanning tunneling spectroscopy (STS) and Kelvin probe force microscopy (KPFM). STS and

CMOS Integrated Antenna-Coupled Field-Effect Transistors for the Detection of Radiation From 0.2 to 4.3 THz

This paper reports on field-effect-transistor-based terahertz detectors for the operation at discrete frequencies spanning from 0.2 to 4.3 THz. They are implemented using a 150-nm CMOS process

Silicon junctionless field effect transistors as room temperature terahertz detectors

Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been

Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

We report on room-temperature, resonant detection of 0.6THz radiation by 250nm gate length GaAs∕AlGaAs heterostructure field-effect transistor. We show that the detection is strongly increased (and

Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120–300nm have been studied as room temperature plasma wave detectors of 0.7THz electromagnetic radiation. In

Electron transport in direct-gap III-V ternary alloys

Electron drift, Hall mobility and thermoelectric power in InPxAs1-x, GaxIn1-xAs and InAsxSb1-x have been calculated by an iterative solution of the Boltzmann equation. A Kane-type band structure