Influence of Etching Potential on Convex Corner Anisotropic Etching in TMAH Solution

@article{Bagolini2010InfluenceOE,
  title={Influence of Etching Potential on Convex Corner Anisotropic Etching in TMAH Solution},
  author={Alvise Bagolini and Alessandro Faes and Massimiliano Decarli},
  journal={Journal of Microelectromechanical Systems},
  year={2010},
  volume={19},
  pages={1254-1259}
}
Anisotropic etching with tetramethylammonium hydroxide (TMAH) water solutions is a simple and CMOS-compatible way to obtain geometrical patterns in single-crystal silicon wafers. The fabrication of trenches and other features is although limited by the need to compensate convex corners which tend to be etched very fast. Such compensation produces footings at the bottom edge of the etched walls, yielding a complex and scarcely predictable geometry which might affect the performance of devices in… CONTINUE READING

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