Influence of Al/sub 2/O/sub 3/ dielectrics on the trap-depth profiles in MOS devices investigated by the charge-pumping method

@article{Jakschik2004InfluenceOA,
  title={Influence of Al/sub 2/O/sub 3/ dielectrics on the trap-depth profiles in MOS devices investigated by the charge-pumping method},
  author={S. Jakschik and A. Avellan and Uwe Schroeder and J. W. Bartha},
  journal={IEEE Transactions on Electron Devices},
  year={2004},
  volume={51},
  pages={2252-2255}
}
High dielectric constant materials come into focus as a replacement for the currently used silicon-dioxide or silicon-oxynitride dielectrics in CMOS processes due to further densification of devices. One main issue of these alternative materials is charge trapping in the dielectric. Charge trapping causes instabilities of electrical properties like threshold voltage shifts and less reliability. Thus, trapping behavior of alternative dielectric materials is an important question. Within this… CONTINUE READING
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