Influence by Layer Structure on the Output EL of CMOS Compatible Silicon-Based Light Emitters

Abstract

Fully combined metal-oxide-semiconductor compatible light-emitting devices based on nano bi-layer structures are fabricated. The active layers are composed of silicon nitride on top of a silicon-enriched silicon dioxide film with different Si concentrations. Electro and photo luminescence spectra of the devices and the active materials are analyzed and… (More)

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