Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range.

@article{Dietz2014InfluenceAA,
  title={Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range.},
  author={Roman J. B. Dietz and Bj{\"o}rn Globisch and Helmut Roehle and Dennis Stanze and Thorsten A. Goebel and Martin Schell},
  journal={Optics express},
  year={2014},
  volume={22 16},
  pages={19411-22}
}
We investigate the influence of Beryllium (Be) doping on the performance of photoconductive THz detectors based on molecular beam epitaxy (MBE) of low temperature (LT) grown In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As multilayer heterostructures (MLHS). We show how the optical excitation power affects carrier lifetime, detector signal, dynamic range and bandwidth in THz time domain spectroscopy (TDS) in dependence on Be-doping concentration. For optimal doping we measured a THz bandwidth in excess of… CONTINUE READING
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