Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays

@inproceedings{Huang2009InductivelyCP,
  title={Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays},
  author={Edward Kwei Wei Huang and Binh Nguyen and Darin Hoffman and Pierre-Yves Delaunay and Manijeh Razeghi},
  booktitle={OPTO},
  year={2009}
}
A challenge for type-II InAs/GaSb superlattice (T2SL) photodetectors is to achieve high fill factor, high aspect ratio etching for third generation focal plane arrays (FPAs). Initially, we compare the morphological and electrical results of single element T2SL photodiodes after BCl 3 /Ar inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) dry etching. Using a Si 3 N 4 hard mask, ICP-etched structures exemplify greater sidewall verticality and smoothness, which are… CONTINUE READING

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