Inducing electronic changes in graphene through silicon (100) substrate modification.

@article{Xu2011InducingEC,
  title={Inducing electronic changes in graphene through silicon (100) substrate modification.},
  author={Y. Xu and K. T. He and S. Schmucker and Z. Guo and J. Koepke and J. Wood and J. Lyding and N. Aluru},
  journal={Nano letters},
  year={2011},
  volume={11 7},
  pages={
          2735-42
        }
}
We have performed scanning tunneling microscopy and spectroscopy (STM/STS) measurements as well as ab initio calculations for graphene monolayers on clean and hydrogen(H)-passivated silicon (100) (Si(100)/H) surfaces. In order to experimentally study the same graphene piece on both substrates, we develop a method to depassivate hydrogen from under graphene monolayers on the Si(100)/H surface. Our work represents the first demonstration of successful and reproducible depassivation of hydrogen… Expand
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References

SHOWING 1-10 OF 40 REFERENCES
Atomic structure of graphene on SiO2.
  • 1,247
  • PDF
First-principles calculations of carbon nanotubes adsorbed on Si(001).
  • 39
  • PDF
Electronic structure of epitaxial graphene layers on SiC: effect of the substrate.
  • 542
  • PDF
Substrate-induced bandgap opening in epitaxial graphene.
  • 1,688
  • PDF
...
1
2
3
4
...