Individual GaN nanowires exhibit strong piezoelectricity in 3D.

@article{MinaryJolandan2012IndividualGN,
  title={Individual GaN nanowires exhibit strong piezoelectricity in 3D.},
  author={Majid Minary-Jolandan and Rodrigo A. Bernal and Irma Kuljanishvili and Victor Parpoil and Horacio D Espinosa},
  journal={Nano letters},
  year={2012},
  volume={12 2},
  pages={970-6}
}
Semiconductor GaN NWs are promising components in next generation nano- and optoelectronic systems. In addition to their direct band gap, they exhibit piezoelectricity, which renders them particularly attractive in energy harvesting applications for self-powered devices. Nanowires are often considered as one-dimensional nanostructures; however, the electromechanical coupling leads to a third rank tensor that for wurtzite crystals (GaN NWs) possesses three independent coefficients, d(33), d(13… CONTINUE READING
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