Indium Phosphide Heterojunction Bipolar Transistors as Magnetic Field Sensors

Abstract

This paper describes the design, fabrication, and characterization of a sensor for moderately strong magnetic fields (~0.1 T and above) based on a heterojunction bipolar transistor (HBT). Our ferromagnetic-semiconductor hybrid device consisted of a mesa-isolated multistep single heterojunction InGaAs/InP HBT with an integrated 3-D thin-film magnetic… (More)

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