Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design

@article{Zhang2014IncreaseOT,
  title={Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design},
  author={Wenliang Zhang and Yangjun Zhu and Shuojin Lu and Xiaoli Tian and Yuan Teng},
  journal={IEEE Electron Device Letters},
  year={2014},
  volume={35},
  pages={1281-1283}
}
In this letter, a novel design concept for the edge termination of reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed and evaluated. The new design can be easily realized by backside layout design without additional processes and manufacturing cost. Simulation results show that the proposed method can reduce the total amount of… CONTINUE READING