Increase in the Random Dopant Induced Threshold Fluctuations and Lowering in Sub-100 nm MOSFETs Due to Quantum Effects : A 3-D Density-Gradient Simulation Study

Abstract

In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub-100 nm MOSFETs. The simulations have been performed using a three-dimensional (3-D) implementation of the density gradient (DG) formalism incorporated in our… (More)

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