Incorporating Effects of Process , Voltage , and Temperature Variation in BTI Model for Circuit Design

@inproceedings{Krishnappa2010IncorporatingEO,
  title={Incorporating Effects of Process , Voltage , and Temperature Variation in BTI Model for Circuit Design},
  author={Shreyas Kumar Krishnappa and Harwinder Singh and Hamid Reza Mahmoodi},
  year={2010}
}
Bias Temperature Instability (BTI) is a major reliability issue in Nano-scale CMOS circuits. BTI effect results in the threshold voltage increase of MOS devices over time. Given the Process, Voltage, and Temperature (PVT) dependence of BTI effect, and the significant amount of PVT variations in Nano-scale CMOS, we propose a method of combining the effects of PVT variations and the BTI effect for circuit analysis. We investigate the PVT dependence of BTI effect on a ring oscillator circuit as a… CONTINUE READING
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