InSb charge-injection device imaging array

@article{Kim1978InSbCD,
  title={InSb charge-injection device imaging array},
  author={J. C. Kim},
  journal={IEEE Transactions on Electron Devices},
  year={1978},
  volume={25},
  pages={232-241}
}
  • J.C. Kim
  • Published 1978 in IEEE Transactions on Electron Devices
InSb CID arrays, in both 1 × 32 line and 16 × 24 two-dimensional format, have been successfully fabricated via a multilayer MIS processing technique. With the 1 × 32 line arrays, two-dimensional images were generated using a scanning mirror and a computer signal-conditioning technique. In this experiment the small temperature difference of a man's face was revealed. Two-dimensional, 16 × 24 area arrays have also been demonstrated in a staring mode by displaying real time raster-scanned IR… CONTINUE READING
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Charge injection imaging,

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  • ISSCC, Dig. Tech. Papers,
  • 1973

InSb MOS detector , ” Final Tech . Rep . , U . S . Army ‘ Night Vision Laboratory , Contract DAAK 02 - 73 - ( 20006 , Feb . 1975 . [ 3 ] - - , “ InSb MIS technology and CID devices

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Low carrier concentration ( PbSn ) Te by molecular beam epitaxy

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