InP quantum dots : Electronic structure , surface effects , and the redshifted emission

@inproceedings{Fu1997InPQD,
  title={InP quantum dots : Electronic structure , surface effects , and the redshifted emission},
  author={Huaxiang Fu and Alex Zunger},
  year={1997}
}
We present pseudopotential plane-wave electronic-structure calculations on InP quantum dots in an effort to understand quantum confinement and surface effects and to identify the origin of the long-lived and redshifted luminescence. We find that ~i! unlike the case in small GaAs dots, the lowest unoccupied state of InP dots is the G1c-derived direct state rather than the X1c-derived indirect state and ~ii ! unlike the prediction ofk•p models, the highest occupied state in InP dots has a 1 sd… CONTINUE READING
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