InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz

@article{Feng2007InPPH,
  title={InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz},
  author={Milton Feng and William J. Snodgrass},
  journal={2007 IEEE 19th International Conference on Indium Phosphide & Related Materials},
  year={2007},
  pages={399-402}
}
InP HBTs have been considered over GaAs HBTs as one of the most promising technology to realize ultra wideband applications due to its wide bandwidth, lower 1/f noise, and high current driving capability, good linearity and good uniformity of threshold voltage distribution for mixed signal circuit applications. Since the report of SiGe HBT with Ft> 350 GHz by IBM in 2002, InP HBT has achieved record performance with Ft > 380 GHz in 2003.