InP HBTs for THz frequency integrated circuits

@article{Urteaga2011InPHF,
  title={InP HBTs for THz frequency integrated circuits},
  author={Miguel Urteaga and Minha Seo and J. B. Hacker and Zachary M. Griffith and A. C. Young and Richard Pierson and Petra Rowell and Anders Skalare and Vibhor Jain and Evan Lobisser and M. J. W. Rodwell},
  journal={IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials},
  year={2011},
  pages={1-4}
}
A 0.25µm InP DHBT process has been developed for THz frequency integrated circuits. A 0.25×4µm<sup>2</sup> HBT exhibits an extrapolated ƒ<inf>t</inf>/ƒ<inf>max</inf> of 430GHz/1.03THz at I<inf>C</inf> =11mA, V<inf>CE</inf>= 1.8V. The transistors achieve this performance while maintaining a common-emitter breakdown voltage (BV<inf>CEO</inf>) >4V. Thin-film interconnects and backside wafer processes have been developed to support selected IC demonstrations. The technology has been used to build… CONTINUE READING
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