InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave transceivers

@article{Baeyens2001InPDI,
  title={InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave transceivers},
  author={Yves Baeyens and Georgios Georgiou and J. Weiner and V. Houtsma and Peter. Paschke and Q. Lee and Andreas Leven and Rose Kopf and John Frackoviak and C. Chen and C. T. Liu and Y. K. Chen},
  journal={GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)},
  year={2001},
  pages={125-128}
}
The combination of device speed (f/sub T/, f/sub max/>150 GHz) and breakdown voltage (V/sup bcco/ of about 10 V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeter-wave low phase-noise VCO's up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential… CONTINUE READING
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