InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies

@article{Rodwell2008InPBI,
  title={InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies},
  author={Mark J. W. Rodwell and Minh Le and Berinder Brar},
  journal={Proceedings of the IEEE},
  year={2008},
  volume={96},
  pages={271-286}
}
Indium phosphide heterojunction bipolar transistors (HBTs) find applications in very wide-band digital and mixed-signal integrated circuits (ICs). Devices fabricated in high-yield process flows at 500 nm feature size obtain 450 GHz cutoff frequencies and 5 V breakdown and enable high yield fabrication of integrated circuits having more than 3000 transistors. Laboratory devices at 250 nm feature size obtain 755 GHz . We describe device and circuit bandwidth limits associated with HBTs, develop… CONTINUE READING
Highly Cited
This paper has 51 citations. REVIEW CITATIONS