InGaP / GaAs / InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

@inproceedings{Chin1996InGaPG,
  title={InGaP / GaAs / InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker},
  author={Terence Y. P. Chin and J. C. P. Chang and J. M. Woodall and W. L. Chena and George I. Haddad},
  year={1996}
}
The growth and device characterization of an InGaP/GaAs double-heterojunction bipolar transistor is reported, the device is grown in a solid source molecular beam epitaxy system equipped with a valved phosphorus cracker. Various designs of base–collector ( B–C) junction are used to eliminate the current blocking effect caused by the conduction band… CONTINUE READING