InGaP/InGaAs Pseudomorphic Heterodoped-Channel FETs With a Field Plate and a Reduced Gate Length by Splitting Gate Metal

@article{Chen2006InGaPInGaAsPH,
  title={InGaP/InGaAs Pseudomorphic Heterodoped-Channel FETs With a Field Plate and a Reduced Gate Length by Splitting Gate Metal},
  author={H. R. Chen and M. K. Hsu and S. Y. Chiu and W. T. Chen and G. H. Chen and Y. C. Chang and W. S. Lour},
  journal={IEEE Electron Device Letters},
  year={2006},
  volume={27},
  pages={948-950}
}
Depositing gate metal across a step undercut between the Schottky barrier layer and the insulator-like layer is employed to obtain a reduced gate length of 0.4 mum with an additional 0.6-mum field plate from a 1-mum gate window. Most dc and ac characteristics including current density (IDSS=451mA/mm), transconductance (gm,max=225mS/mm), breakdown voltages (VBD(DS)/V BD(GD)=22/-25.5V), gate-voltage swing (GVS=2.24V), cutoff, and maximum oscillation frequencies (ft/fmax=17.2/32GHz) are improved… CONTINUE READING