InGaN‐based light‐emitting diodes grown on grooved sapphire substrates

@inproceedings{Wang2006InGaNbasedLD,
  title={InGaN‐based light‐emitting diodes grown on grooved sapphire substrates},
  author={Wei-kai Wang and Dong Sing Wuu and Shu-Hei Lin and Shih-Yung Huang and Ray-Hua Horng},
  year={2006}
}
We investigate the microstructure and electrical properties of the InGaN-based light-emitting diodes (LEDs) fabricated onto patterned sapphire substrates (PSSs) with parallel grooves. The PSS with parallel grooves (ridge: 3 μm; trench: 2 μm) along the (11-20) direction were etched using an inductively-coupled-plasma etcher with different etching depths. It was found that the threading dislocation density in the GaN epilayer can be effectively reduced by the present PSS technique as indicated… CONTINUE READING

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