InGaN/GaN quantum well interconnected microdisk light emitting diodes

@article{Jin2000InGaNGaNQW,
  title={InGaN/GaN quantum well interconnected microdisk light emitting diodes},
  author={S. Jin and J. Li and J. Lin and Hongxing Jiang},
  journal={Applied Physics Letters},
  year={2000},
  volume={77},
  pages={3236-3238}
}
  • S. Jin, J. Li, +1 author Hongxing Jiang
  • Published 2000
  • Physics
  • Applied Physics Letters
  • Interconnected microdisk light-emitting diodes (μ-LEDs) have been fabricated from InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor deposition. These interconnected μ-disk LEDs fit into the same device area taken up by a conventional broad-area LED. The performance characteristic of these interconnected μ-disk LEDs, including I–V and L–I characteristics as well as electroluminescence spectra have been measured and compared with those of the conventional broad… CONTINUE READING
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