InGaN/GaN quantum well interconnected microdisk light emitting diodes

@article{Jin2000InGaNGaNQW,
  title={InGaN/GaN quantum well interconnected microdisk light emitting diodes},
  author={S. X. Jin and Jing Li and Jingyu Lin and Hongxing Jiang},
  journal={Applied Physics Letters},
  year={2000},
  volume={77},
  pages={3236-3238}
}
Interconnected microdisk light-emitting diodes (μ-LEDs) have been fabricated from InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor deposition. These interconnected μ-disk LEDs fit into the same device area taken up by a conventional broad-area LED. The performance characteristic of these interconnected μ-disk LEDs, including I–V and L–I characteristics as well as electroluminescence spectra have been measured and compared with those of the conventional broad… 

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References

SHOWING 1-9 OF 9 REFERENCES
GaN microdisk light emitting diodes
Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have
Optical properties of GaN/AlGaN multiple quantum well microdisks
An array of microdisks with a diameter of about 9 μm and spacing of 50 μm has been fabricated by dry etching from a 50 A/50 A GaN/AlxGa1-xN (x∼0.07) multiple quantum well (MQW) structure grown by
Optical modes within III-nitride multiple quantum well microdisk cavities
Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 A/50 A GaN/AlxGa1−xN(x∼0.07) and 45 A/45 A InxGa1−xN/GaN(x∼0.15) multiple quantum well structures.
LASER ACTION IN GAN PYRAMIDS GROWN ON (111) SILICON BY SELECTIVE LATERAL OVERGROWTH
Laser action was observed in GaN pyramids under strong optical pumping at room temperature. The pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon
Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities
Microrings of varying sizes have been fabricated from InxGa1−xN/GaN (x∼0.15) multiple quantum wells (MQWs). Photolithography and dry etching techniques including both ion-beam and inductively coupled
Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities
We report optically pumped, pulsed lasing action in whispering-gallery modes of GaN microdisk cavities at room temperature. The microdisk structure was fabricated by reactive-ion etching a 2-μm-thick
The Blue Laser Diode: GaN based Light Emitters and Lasers
Physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GaN p-Type GaN InGaN Zn and Si co-doped InGaN/AlGaN double-heterostructure blue
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each
Room temperature lasing at blue wavelengths in gallium nitride microcavities
TLDR
The result suggests that practical blue vertical cavity surface-emitting lasers can be realized in gallium-nitride-based material systems.