InGaN/GaN quantum well interconnected microdisk light emitting diodes

@article{Jin2000InGaNGaNQW,
  title={InGaN/GaN quantum well interconnected microdisk light emitting diodes},
  author={S. Jin and J. Li and J. Lin and Hongxing Jiang},
  journal={Applied Physics Letters},
  year={2000},
  volume={77},
  pages={3236-3238}
}
  • S. Jin, J. Li, +1 author Hongxing Jiang
  • Published 2000
  • Physics
  • Applied Physics Letters
  • Interconnected microdisk light-emitting diodes (μ-LEDs) have been fabricated from InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor deposition. These interconnected μ-disk LEDs fit into the same device area taken up by a conventional broad-area LED. The performance characteristic of these interconnected μ-disk LEDs, including I–V and L–I characteristics as well as electroluminescence spectra have been measured and compared with those of the conventional broad… CONTINUE READING
    98 Citations

    Figures from this paper.

    Performance enhancements in optoelectrical properties of InGaN/GaN light-emitting diodes with micro-hole arrayed indium-tin-oxide layer
    Enhancement in light output of InGaN-based microhole array light-emitting diodes
    • 45
    • Highly Influenced
    • PDF
    Current blocking layer in GaN light-emitting diode
    • 1
    Fabrication and performance of parallel-addressed InGaN micro-LED arrays
    • 55

    References

    SHOWING 1-10 OF 10 REFERENCES
    GaN microdisk light emitting diodes
    • 113
    • PDF
    Optical Processes in Microcavities
    • 378