InGaN/GaN quantum well interconnected microdisk light emitting diodes

  title={InGaN/GaN quantum well interconnected microdisk light emitting diodes},
  author={S. X. Jin and Jing Li and Jingyu Lin and Hongxing Jiang},
  journal={Applied Physics Letters},
Interconnected microdisk light-emitting diodes (μ-LEDs) have been fabricated from InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor deposition. These interconnected μ-disk LEDs fit into the same device area taken up by a conventional broad-area LED. The performance characteristic of these interconnected μ-disk LEDs, including I–V and L–I characteristics as well as electroluminescence spectra have been measured and compared with those of the conventional broad… 

Figures from this paper

Performance enhancements in optoelectrical properties of InGaN/GaN light-emitting diodes with micro-hole arrayed indium-tin-oxide layer
We demonstrated that the InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) with micro-hole arrays exhibit better performance in optoelectrical properties than do the conventional
Enhancement in light output of InGaN-based microhole array light-emitting diodes
InGaN-based microhole array light-emitting diodes (LEDs) with hole diameters (d) of 3-15 /spl mu/m were fabricated using self-aligned etching. The effects of size on the device characteristics,
Current blocking layer in GaN light-emitting diode
InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) was fabricated using a SiO2 current blocking layer (CBL) inserted underneath the p-pad electrode. The forward voltage, Vf at 20 mA for
High extraction efficiency InGaN micro-ring light-emitting diodes
Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional
Micro-Square-Array InGaN-Based Light-Emitting Diode with an Insulated Ga2O3 Layer through a Photoelectrochemical Process
InGaN-based micro-square-array light emitting diode (MSA-LED) was fabricated by filling with an insulated Ga2O3 layer around the individual micro-square patterns for a metal interconnected process.
InGaN micro-pixellated light-emitting diodes with nano-textured surfaces and modified emission profiles
We present the fabrication details and performance characteristics of InGaN light-emitting diodes (LEDs) consisting of arrays of interconnected micro-pixels where each micro-pixel is nano-textured
Fabrication and performance of parallel-addressed InGaN micro-LED arrays
High-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12, and 20 /spl mu/m, respectively, and overall
Electro-ridge for large injection current of micro-size InGaN light emitting diode
High-performance, blue micro-size InGaN light emitting diodes (LEDs) with diameters of 3 to 20 μm have been fabricated. An ion implantation technique and a 12 micron electro-ridge were used to
Size dependence of III-nitride microdisk light-emitting diode characteristics
Individual microdisk blue-light-emitting diodes (μ-LEDs) of varying diameters from 5 to 20 μm have been fabricated from InGaN/GaN quantum wells. Size effects on the μ-LED characteristics, including


GaN microdisk light emitting diodes
Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have
Optical modes within III-nitride multiple quantum well microdisk cavities
Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 A/50 A GaN/AlxGa1−xN(x∼0.07) and 45 A/45 A InxGa1−xN/GaN(x∼0.15) multiple quantum well structures.
Laser action was observed in GaN pyramids under strong optical pumping at room temperature. The pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon
Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities
Microrings of varying sizes have been fabricated from InxGa1−xN/GaN (x∼0.15) multiple quantum wells (MQWs). Photolithography and dry etching techniques including both ion-beam and inductively coupled
Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities
We report optically pumped, pulsed lasing action in whispering-gallery modes of GaN microdisk cavities at room temperature. The microdisk structure was fabricated by reactive-ion etching a 2-μm-thick
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each
Room temperature lasing at blue wavelengths in gallium nitride microcavities
The result suggests that practical blue vertical cavity surface-emitting lasers can be realized in gallium-nitride-based material systems.
The Blue Laser Diode: GaN based Light Emitters and Lasers
Physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GaN p-Type GaN InGaN Zn and Si co-doped InGaN/AlGaN double-heterostructure blue
Optical properties of GaN/AlGaN multiple quantum well microdisks
An array of microdisks with a diameter of about 9 μm and spacing of 50 μm has been fabricated by dry etching from a 50 A/50 A GaN/AlxGa1-xN (x∼0.07) multiple quantum well (MQW) structure grown by