InGaN/GaN quantum well interconnected microdisk light emitting diodes

  title={InGaN/GaN quantum well interconnected microdisk light emitting diodes},
  author={S. X. Jin and Jing Li and Jingyu Lin and Hongxing Jiang},
  journal={Applied Physics Letters},
Interconnected microdisk light-emitting diodes (μ-LEDs) have been fabricated from InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor deposition. These interconnected μ-disk LEDs fit into the same device area taken up by a conventional broad-area LED. The performance characteristic of these interconnected μ-disk LEDs, including I–V and L–I characteristics as well as electroluminescence spectra have been measured and compared with those of the conventional broad… 

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