• DOI:10.1063/1.1326479
• Corpus ID: 2062985

InGaN/GaN quantum well interconnected microdisk light emitting diodes

@article{Jin2000InGaNGaNQW,
  title={InGaN/GaN quantum well interconnected microdisk light emitting diodes},
  author={S. X. Jin and Jing Li and Jingyu Lin and Hongxing Jiang},
  journal={Applied Physics Letters},
  year={2000},
  volume={77},
  pages={3236-3238}
}

• S. Jin, Jing Li, +1 author Hongxing Jiang
• Published 7 November 2000
• Engineering
• Applied Physics Letters

Interconnected microdisk light-emitting diodes (μ-LEDs) have been fabricated from InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor deposition. These interconnected μ-disk LEDs fit into the same device area taken up by a conventional broad-area LED. The performance characteristic of these interconnected μ-disk LEDs, including I–V and L–I characteristics as well as electroluminescence spectra have been measured and compared with those of the conventional broad-area LEDs. For interconnected μ-disk LEDs, while VF, the forward biased voltage at 20 mA, was slightly increased, the emission efficiency was increased by as much as 60% over the conventional LEDs for a fixed device area. The results thus suggested that replacing a conventional broad-area LED with an interconnected μ-disk LED, the external quantum efficiency can be significantly enhanced. Finally, the fabrication processes of the interconnected μ-disk LEDs are almost the same as those of the conventional broad-area LED...