InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

@inproceedings{Teubert2013InGaNGaNQD,
  title={InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface},
  author={J{\"o}rg Teubert and Sebastian Koslowski and Sina Lippert and Markus Schaefer and Jens Wallys and G. P. Dimitrakopulos and Th. Kehagias and Ph. Komninou and Aparna Das and Eva Monroy and Martin Eickhoff},
  year={2013}
}
  • Jörg Teubert, Sebastian Koslowski, +8 authors Martin Eickhoff
  • Published 2013
  • Physics
  • We investigated the electric-field dependence of the photoluminescence-emission properties of InGaN/GaN quantum dot multilayers in contact with an electrolyte. Controlled variations of the surface potential were achieved by the application of external electric fields using the electrolytic Schottky contact and by variation of the solution's pH value. Prior to characterization, a selective electrochemical passivation process was required to suppress leakage currents. The quantum dot luminescence… CONTINUE READING

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