InGaN/GaN field emitters with a piezoelectrically-lowered surface barrier

@article{Underwood1998InGaNGaNFE,
  title={InGaN/GaN field emitters with a piezoelectrically-lowered surface barrier},
  author={R. D. Underwood and P. Kozodoy and Scott Keller and S. P. BenBaars and U. K. Mishra},
  journal={Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382)},
  year={1998},
  pages={283-284}
}
The operating characteristics of field emitters are exponentially dependent on two device parameters: the field enhancement factor and the surface energy barrier height. In addition to these device parameters, the practical use of field emitters as electron sources is dependent on the stability and uniformity of field emission. We have investigated field… CONTINUE READING