InGaAs high speed communication photodiodes

Abstract

This paper reviews trends in InGaAs based communication photodetectors design. In particular, new avalanche structures using Al(Ga)(In)As large bandgap material used for high sensitivity photoreceivers in access network will be described as well as highly linear uni-travelling-carrier UTC photodiodes, well suited for high bit rates using coherent detection… (More)

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@article{Achouche2009InGaAsHS, title={InGaAs high speed communication photodiodes}, author={Mohand Achouche and Genevieve Glastre and Catherine Caillaud and Majda Lahrichi and David C J Carpentier}, journal={2009 IEEE LEOS Annual Meeting Conference Proceedings}, year={2009}, pages={361-362} }