InGaAs Surface Normal Photodiode for 2 $\mu \text{m}$ Optical Communication Systems

@article{Ye2015InGaAsSN,
  title={InGaAs Surface Normal Photodiode for 2  \$\mu \text\{m\}\$  Optical Communication Systems},
  author={Nan Ye and Hua Yang and Michael Gleeson and Nicola Pavarelli and Hongyu Zhang and J O'callaghan and Wei Han and Noreen Nudds and Sean Collins and Agnieszka Gocalinska and Emanuele Pelucchi and Peter A. O'Brien and Fatima C. Garcia Gunning and Frank H. Peters and Brian Corbett},
  journal={IEEE Photonics Technology Letters},
  year={2015},
  volume={27},
  pages={1469-1472}
}
High bandwidth 2-μm wavelength surface normal p-i-n photodiodes using a high indium-content InGaAs strain-relaxed absorbing layer clad by p- and n-doped AlInGaAs layers are realized. A parabolic grading was used to relax the lattice constant from that of the InP substrate. We compare structures with different p-doping profiles and absorber thicknesses to achieve a 3-dB bandwidth of ~10 GHz while maintaining a photoresponsivity of 0.93 A/W. A clear opening of the 10-Gb/s eye pattern was obtained… CONTINUE READING
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