InAsN/InGaAs/InP quantum well structures for midinfrared diode lasers

@article{Lin2003InAsNInGaAsInPQW,
  title={InAsN/InGaAs/InP quantum well structures for midinfrared diode lasers},
  author={H. Lin and D. Shih and Y. H. Lin and K. Chiang},
  journal={The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.},
  year={2003},
  volume={2},
  pages={806-807 vol.2}
}
  • H. Lin, D. Shih, +1 author K. Chiang
  • Published 2003
  • Materials Science
  • The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.
InAsN/InGaAs multiple quantum wells (MQWs) structures for midinfrared diode lasers is grown on (100) InP substrates by using a VG V-80H gas-source molecular epitaxy (GSMBE). After the GSMBE growth, the laser sample is annealed at 575/spl deg/C for 20 min under N ambient in order to improve the crystal quality. The PL spectrums of the laser structure before and after annealing are studied. Then the structure is processed into 50-nm-wide broad-area lasers. Laser oscillation under pulsed injection… Expand

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References

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The growth of InAsN/InGaAs(P) quantum wells (QWs) on InP substrates by gas-source molecular-beam epitaxy and a rf plasma nitrogen source is reported for the first time. The double crystal x-rayExpand
Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy
InAsN/InGaAs single quantum wells (SQWs) with different nitrogen concentration have been successfully grown on InP substrates by gas source molecular beam epitaxy used rf plasma nitrogen source.Expand
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TLDR
Using first-principles supercell calculations, a giant (7{endash}16 eV) and composition-dependent optical bowing coefficient in GaAs{sub 1{minus}{ital x}N{sub {ital x}} alloys} is found and it is suggested that in semiconductor alloys band gap variation as a function of {italx} can be divided into two regions. Expand