InAs quantum dot infrared photodetectors with In 0 . 15 Ga 0 . 85 As strain-relief cap layers

@inproceedings{Ye2002InAsQD,
  title={InAs quantum dot infrared photodetectors with In 0 . 15 Ga 0 . 85 As strain-relief cap layers},
  author={Zhengmao Ye and Joe C. Campbella and Zhonghui Chen and Eui-Tae Kim and Anupam Madhukar},
  year={2002}
}
As a potential candidate for mid-infrared ~3–5 mm! and far-infrared ~8–14 mm! photon detection, the quantum d infrared photodetector ~QDIP! has been the subject of exte sive research efforts in recent years. Normal-incide QDIPs with n-n-n and n-i-n vertical configurations have been reported. Compared with quantum well infra photodetectors, QDIPs are sensitive to normal-incidence frared radiation owing to three-dimensional confinement the electrons in the quantum dots, a characteristic tha… CONTINUE READING