InAs-inserted-channel InAlAs/InGaAs inverted HEMTs with superconducting electrodes

@article{Akazaki1997InAsinsertedchannelII,
  title={InAs-inserted-channel InAlAs/InGaAs inverted HEMTs with superconducting electrodes},
  author={Tatsushi Akazaki and Hirokazu Takayanagi and Junsaku Nitta and Takatomo Enoki},
  journal={IEEE Transactions on Applied Superconductivity},
  year={1997},
  volume={7},
  pages={2921-2924}
}
We investigate the device characteristics of InAs-inserted-channel In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As inverted high electron mobility transistors (HEMTs) with superconducting Nb electrodes. In these transistors, the ohmic contact between Nb and the two-dimensional electron gas formed in the InAs layer is obtained by contact with the Nb… CONTINUE READING